The role of constitutional undercooling in the planar growth of Al-rich Cu-Si alloys

By considering a small undercooling at the solidification interface of unidirectionally solidified Al-rich Cu-Si alloys, it is possible to explain the fact that the different silicon aggregates are able to grow in planar fronts. It is inferred that they must always lead the other phases during the g...

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Bibliographic Details
Published in:Metallography 1980-01, Vol.13 (3), p.267-275
Main Authors: Varschavsky G., Ari, Schnake F., Waldo
Format: Article
Language:English
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Summary:By considering a small undercooling at the solidification interface of unidirectionally solidified Al-rich Cu-Si alloys, it is possible to explain the fact that the different silicon aggregates are able to grow in planar fronts. It is inferred that they must always lead the other phases during the growth process. The analysis also justifies the coexistence of two types of silicon aggregate, since the existence of a constitutional undercooling region ahead of the interface permits them to solidify at the same rate under different degrees of undercooling in their respective faces. This coexistence is possible over a range of freezing rates. Micrographs illustrating these features are also presented.
ISSN:0026-0800
DOI:10.1016/0026-0800(80)90005-1