Nonlinear refraction in silicon induced by one-micron picosecond pulses

We use self-defocusing of 25 ps pulses of 1 μm radiation to quantify the optically-induced changes in the refractive index of Si. We find that a model based on external self-action and a Drude polarization can accurately describe our results. The model assumes linear generation of electron-hole pair...

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Bibliographic Details
Published in:Optics communications 1987-11, Vol.64 (4), p.387-392
Main Authors: Boggess, Thomas F., Bohnert, K., Norwood, D.P., Mire, C.D., Smirl, Arthur L.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Nonlinear optics
Optics
Physics
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Summary:We use self-defocusing of 25 ps pulses of 1 μm radiation to quantify the optically-induced changes in the refractive index of Si. We find that a model based on external self-action and a Drude polarization can accurately describe our results. The model assumes linear generation of electron-hole pairs but also includes free-carrier absorption. We measure a peak phase distortion at 2.25 GW/cm 2 that is roughly 60 times larger than produced by the same thickness of CS 2 at this irradiance.
ISSN:0030-4018
1873-0310
DOI:10.1016/0030-4018(87)90257-4