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Write-beam induced crystal damage in the conducting PRIZ
Surface and sub-surface crystal damage of the conducting PRIZ spatial light modulator is reported. The damage, induced by 442 nm write-beam power densities as small as 100 μW/cm 2, is limited to the surface and the near surface region on the negative electrode side of the device. Surface layer disor...
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Published in: | Optics communications 1987-07, Vol.63 (2), p.78-80 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Surface and sub-surface crystal damage of the conducting PRIZ spatial light modulator is reported. The damage, induced by 442 nm write-beam power densities as small as 100 μW/cm
2, is limited to the surface and the near surface region on the negative electrode side of the device. Surface layer disorder resulting from mechanical surface preparation plays a key role in the damage process. As the surface layer perfection is improved, the density of the induced damage decreases and the threshold increases. The damage threshold level is strongly coupled to the non-uniform electric field in the near surface region of the crystal. |
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ISSN: | 0030-4018 1873-0310 |
DOI: | 10.1016/0030-4018(87)90262-8 |