Calculation of the velocity-field characteristic for gallium arsenide

The velocity-field characteristic of GaAs has been calculated taking all the relevant scattering mechanisms into account. A negative differential resistivity is found between a threshold field of 3.2 kV/cm and a valley field of 25 kV/cm beyond which the drift velocity saturates.

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Bibliographic Details
Published in:Physics letters 1966-06, Vol.21 (5), p.489-490
Main Authors: Butcher, P.N., Fawcett, W.
Format: Article
Language:English
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Summary:The velocity-field characteristic of GaAs has been calculated taking all the relevant scattering mechanisms into account. A negative differential resistivity is found between a threshold field of 3.2 kV/cm and a valley field of 25 kV/cm beyond which the drift velocity saturates.
ISSN:0031-9163
DOI:10.1016/0031-9163(66)91266-2