Magnetic field effects on hydrogenic donor states in GaAs

The far infrared photoconductivity of epitaxial n-type GaAs has been studied near 4.2 °K, as a function of magnetic field. The results show that the photoconductivity is largely due to transitions from the donor ground state to excited states. The observed transition energies are in good agreement w...

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Bibliographic Details
Published in:Solid state communications 1969-06, Vol.7 (12), p.883-886
Main Authors: Kaplan, R., Kinch, M.A., Scott, W.C.
Format: Article
Language:English
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Summary:The far infrared photoconductivity of epitaxial n-type GaAs has been studied near 4.2 °K, as a function of magnetic field. The results show that the photoconductivity is largely due to transitions from the donor ground state to excited states. The observed transition energies are in good agreement with the results of effective mass theories. Die lichtelektrische Leitfähigkeit von epitaxischem n-Typ-Galliumarsenid im fernen Infrarot wurde bei 4,2 °K als Funktion des magnetischen Feldes untersucht. Es ergab sich, dass diese Leitfähigkeit hauptsächlich auf Elektronenübergangen vom Donator-grundzustand zu angeregten Zuständen beruht. Die beobachteten Übergangsenergien stimmen mit denen aus der Theorie der effektiven Masse folgenden gut überein.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(69)90435-9