Resonant type current anomalies in the high-field transport in semiconductors (electrophonon resonance)

• Published in: Solid state communications 1972-01, Vol.10 (6), p.471-477
• Main Authors: Bryxin, V.V., Firsov, Yu.A.
• Format: Article
• Language: English
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(72)90047-6

The theory of resonant type current anomalies occuring in non-degenerate semiconductors in a very high electric fields is developed in the one-band approximation. Electron-phonon interaction is supposed to be weak. The differential conductivity σ displays a discontinuity σ whenever the resonance conditions are reached ifω o= NΩ E , N=1, 2,3… Here ω 0 is the frequency of optical phonon, ħΩ E is the separation between adjacent levels of Stark ladder. For small h ̵ Ω E Δϵ one gets Δσ σ ∼ h ̵ Ω E Δϵ⊥ 2 ln Δϵ h ̵ ω o here Δϵ is the Bloch electron's bandwidth, Δϵ⊥ is the bandwidth for the Stark subband. Theory is compared with an experiment. пoctpoeha teopия, oпиcыbaющaя hemohotohhyы эabиcиmoctь toкa j ot cильhoгo элeкtpичecкoгo пoля E b hebцpoждeh-h ыx пoлyпpoboдhикax co cлaбoq̌i элeкpoh-фohohhoq̌i cbяoью пoкaэaho, чto b кbaэлклaccичecкom cлyчae, кoгдa ħΩ E /Δϵ perp;⪡1; пpoиэboдhaя d j/d E иcпцtцbact cкaчoк пopядкa h ̵ Ω E Δϵ⊥ 2 ln Δϵ h ̵ ω o пpи дoctижehии peэohahchoгo ycлobия ω o=NΩ E . эдecь ω 0- дpeдeльhaя чactota oпtичecкoгo фohoha, N-цeлoe чиcлo, ħΩ E - pacctoяhиe шtapкobcкиmи пoдэohamи, Δϵ - шиpиha paэpeшehhoǎ1 эohы. Пpoиэboдиtcя cpabhehиe teopииэкcпиmehtom.