Fundamental absorption edge in GaN, InN and their alloys

Optical measurements were performed near the fundamental absorption edge for thin polycrystalline films with the entire region of composition in the GaNInN quasi-binary system. The direct energy gap E g for GaN and InN was found to be 3.40 and 1.95 eV, respectively. The dependence of E g on composi...

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Bibliographic Details
Published in:Solid state communications 1972-01, Vol.11 (5), p.617-621
Main Authors: Osamura, Kozo, Nakajima, Kazuo, Murakami, Yotaro, Shingu, Paul H., Ohtsuki, Akira
Format: Article
Language:English
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Summary:Optical measurements were performed near the fundamental absorption edge for thin polycrystalline films with the entire region of composition in the GaNInN quasi-binary system. The direct energy gap E g for GaN and InN was found to be 3.40 and 1.95 eV, respectively. The dependence of E g on composition was found to deviate downward from linearity. The degree of bowing was expressed well by the theoretical bowing parameter (1.05 eV) calculated by the dielectric method. Optische Messungen wurden in der Nähe der fundamental Apsorptionskanten für dünne polykristalline Schichten mit dem ganzem Zusammensetzungsbereich in GaNInN quasibinären System ausgeführt. Die direkten Bandabstände E g ergab für GaN und InN zu 3.40 und 1.95 eV. Die Zusammensetzungsabhangigkeit der E g wurde gefunden, der ergibt sich die negativen Abweichungen von der gerade Linien. Der Abweichungsgrad wurde gute durch das theoretische Verbeugungsparameter (1.05 eV), berechnet durch der dielektrischen Methode, ausgedrückt.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(72)90474-7