Quantum mechanical hopping in one-dimensional superstructure

The photo-induced increment of a.c. conductance, Δ G, has been studied in the dye-sensitized Langmuir-films with different structures and compositions. Each Δ G-ω characteristic exhibits humps at frequencies which decrease exponentially with increasing thicknesses of constituent monolayers. The hump...

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Bibliographic Details
Published in:Solid state communications 1974-01, Vol.15 (11), p.1867-1870
Main Authors: Sugi, M., Nembach, K., Möbius, D., Kuhn, H.
Format: Article
Language:English
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Summary:The photo-induced increment of a.c. conductance, Δ G, has been studied in the dye-sensitized Langmuir-films with different structures and compositions. Each Δ G-ω characteristic exhibits humps at frequencies which decrease exponentially with increasing thicknesses of constituent monolayers. The humps are assumed to correspond to the characteristic relaxation times of quantum mechanical hopping governed by the one-dimensional superstructure associated with the film. Die lichtinduzierte Zunahme des Wechselstromleitwerts Δ G wurde in unterschiedlich strukturierten Systemen monomolecularer Schichten in Abhängigkeit von der Frequenz ω der angelegten Wechselspannung untersucht. Die Δ G( lgω) Charakteristiken zeigen Banden, deren Frequenzen exponentiell mit tunehmender Dicke der im Systembau verwendeten monomolecularen Schichten abnehmen. Es wird daher angenommen, daβ den Banden die Relaxationszeiten der Tunnelprozesse der Elektronen durch die monomolekulare Schicht entsprechen.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(74)90105-7