Photocurrent decay in silicon at low temperatures

We report measurements performed at low temperatures in silicon of the transient photovoltaic current following excitation by an intense laser light pulse. They show the occurrence of a delayed minor current peak, which we suggest is related to the free carriers obtained, when electron-hole droplets...

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Bibliographic Details
Published in:Solid state communications 1976-01, Vol.19 (3), p.253-255
Main Author: Kristensen, I.K.
Format: Article
Language:English
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Summary:We report measurements performed at low temperatures in silicon of the transient photovoltaic current following excitation by an intense laser light pulse. They show the occurrence of a delayed minor current peak, which we suggest is related to the free carriers obtained, when electron-hole droplets after drift in an exciton density gradient are destroyed by heating.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(76)90862-0