Residual lattice absorption in gallium arsenide

The residual lattice absorption of GaAs in the three and four phonon regime is measured over a range of temperatures. The spectra reveal persistent structural features which are interpreted theoretically in terms of phonon density of states effects.

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Bibliographic Details
Published in:Solid state communications 1977-01, Vol.23 (1), p.13-15
Main Authors: Lipson, Herbert G., Bendow, Bernard, Yukon, Stanford P.
Format: Article
Language:English
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Description
Summary:The residual lattice absorption of GaAs in the three and four phonon regime is measured over a range of temperatures. The spectra reveal persistent structural features which are interpreted theoretically in terms of phonon density of states effects.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(77)90618-4