Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon

We report luminescence measurements of transitions involving bound multiple exciton complexes in Si:Sb and Si:As. The systematics of the donor systems Si:P, Si:As and Si:Sb are examined. We find that the splittings between the two observed series of lines are independent of complex number and donor...

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Bibliographic Details
Published in:Solid state communications 1978-01, Vol.28 (7), p.491-496
Main Authors: Elliott, K.R., McGill, T.C.
Format: Article
Language:English
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Summary:We report luminescence measurements of transitions involving bound multiple exciton complexes in Si:Sb and Si:As. The systematics of the donor systems Si:P, Si:As and Si:Sb are examined. We find that the splittings between the two observed series of lines are independent of complex number and donor type.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(78)90473-8