Ultrasonic amplification semiconductors subjected to deformation

It is shown that in semiconductors with inherent piezo-effect or high relative dielectric permittivity ( ϵ rel ⩾ 10 3) which have undergone uniaxial deformation an additional electron-phonon interaction is possible, this being conditioned by the non-linear deformation piezo-effect or electrostrictio...

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Bibliographic Details
Published in:Solid state communications 1982-01, Vol.44 (3), p.407-409
Main Authors: Sdebsky, A.P., Savchuk, A.U.
Format: Article
Language:English
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Summary:It is shown that in semiconductors with inherent piezo-effect or high relative dielectric permittivity ( ϵ rel ⩾ 10 3) which have undergone uniaxial deformation an additional electron-phonon interaction is possible, this being conditioned by the non-linear deformation piezo-effect or electrostriction. The non-linear piezo-module in CdS and the electrostriction constant of the second order in SrTiO 3 have been experimentally investigated. Additional ultrasound amplification conditioned by deformation can exceed the amplification in a non-deformed semiconductor by one order.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(82)90881-X