Damping of the magnetoplasmon propagating along a rough dielectric-semiconductor interface

The damping of a surface magnetoplasmon propagating along a rough dielectric-semiconductor interface is considered. The interaction between charge carriers in the semiconductor and the boundary has been taken into account both in the “specularity parameter” and a microscopic model of the boundary. T...

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Bibliographic Details
Published in:Solid state communications 1983-01, Vol.48 (7), p.605-610
Main Authors: Gabashvili, A.A., Krokhin, A.A.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:The damping of a surface magnetoplasmon propagating along a rough dielectric-semiconductor interface is considered. The interaction between charge carriers in the semiconductor and the boundary has been taken into account both in the “specularity parameter” and a microscopic model of the boundary. The effective surface relaxation frequency has been analyzed as a function of the boundary parameters and the magnetic field.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(83)90525-2