Heavy doping effects on donor-acceptor spectra of polar semiconductors at low temperatures

• Published in: Solid state communications 1983-01, Vol.47 (9), p.743-745
• Main Authors: Van Cong, H., Brunet, S., Chanar, S.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; General theory; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(83)90647-6

The heavy doping effects on donor-acceptor (DA)-pair spectra at small DA-pair distances R are investigated, basing on an effective screened impurity potential model given by Morgan and on the results of the R-dependent electron (hole)—longitudinal optical phonon interaction energy obtained by Kartheuser et al. It is suggested that the deviation of the electron—hole recombination energy by dense impurities (or at small R), found from the energy of the emitted photon for a zero-phonon transition, results from the band-gap narrowing effect. At large R, we have found that the energy gap of the pure ZnSe crystal is equal to 2.827 eV, in good agreement with observed results. Finally, at small R, our numerical results applied to ZnSe doped with ln and Li impurities are compared with other theories and with observed results.