Disorder and the fractional quantum Hall effect

The fractional quantum Hall effect is studied in the 2D electron gas of four GaAs-Al xGa 1−xAs heterostructures. Localization due to disorder, known to give rise to the wide integral quantum Hall plateaus, is demonstrated to inhibit the fractional effect, which is observed only in the higher mobilit...

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Bibliographic Details
Published in:Solid state communications 1984-01, Vol.50 (9), p.841-844
Main Authors: Paalanen, M.A., Tsui, D.C., Gossard, A.C., Hwang, J.C.M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The fractional quantum Hall effect is studied in the 2D electron gas of four GaAs-Al xGa 1−xAs heterostructures. Localization due to disorder, known to give rise to the wide integral quantum Hall plateaus, is demonstrated to inhibit the fractional effect, which is observed only in the higher mobility samples.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(84)90343-0