Electrical characterization of tin disulphide crystals

Tin disulphide crystals have been grown by the physical vapour transport method and the electrical conduction mechanism in these crystals using MIM structures is reported. The conduction is found to be space charge limited. Trap concentration, trap depth, free carrier mobility and Fermi level etc. h...

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Bibliographic Details
Published in:Solid state communications 1984, Vol.49 (1), p.103-106
Main Authors: George, Joy, Valsala Kumari, C.K.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
High-field and nonlinear effects
Physics
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Summary:Tin disulphide crystals have been grown by the physical vapour transport method and the electrical conduction mechanism in these crystals using MIM structures is reported. The conduction is found to be space charge limited. Trap concentration, trap depth, free carrier mobility and Fermi level etc. have been determined. Dependence of the current on temperature in the ohmic region gives an activation energy of 0.40 ± 0.05 eV.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(84)90572-6