Lattice coupling strength of electron-induced-irradiated defects in InP

Optical properties of some Electron-Induced-Irradiated defects in InP, hole traps H 7, H 5, H 4 and electron trap E 11, are investigated by means of Deep-Level-Optical-Spectroscopy. Both majority and minority photoionisation cross-sections measurements of E 11 and H 5 are performed, together with di...

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Bibliographic Details
Published in:Solid state communications 1986-02, Vol.57 (6), p.431-435
Main Authors: Bastide, G., Bayaa, D., Rouzeyre, M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Summary:Optical properties of some Electron-Induced-Irradiated defects in InP, hole traps H 7, H 5, H 4 and electron trap E 11, are investigated by means of Deep-Level-Optical-Spectroscopy. Both majority and minority photoionisation cross-sections measurements of E 11 and H 5 are performed, together with direct measurements of the hole capture cross section of H 5. In case of levels H 7 and H 4 the only majority photoionisation cross section could be obtained. Interpretation is made on the basis of one dimensional configuration coordinate diagrams. From these it is concluded that levels H 4 and E 11 are weakly relaxed while levels H 5 and H 7 are strongly coupled to the lattice. This is a new indication that EII defects in InP can be at least classified into two groups, owing to their microscopic origin and to their physical properties.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(86)90485-0