Hydrogen-acceptor interaction in CdTe and ZnTe studied by photoluminescence

• Published in: Solid state communications 1986-05, Vol.58 (6), p.343-346
• Main Authors: Svob, L., Marfaing, Y.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(86)90801-X

Photoluminescence studies on CdTe and Znte implanted with hydrogen and deuterium at 150keV in the fluence range 10 14–10 15 cm -2 are reported. In CdTe the introduction of hydrogen (deutrium) makes the recombination lines of excitons bounds to residual acceptors to disappear. The donor bound excitons are not affected. In ZnTe the intensity of the principal acceptor-bound exciton (Cu) is much reduced. In both crystals a new sharp line (H) appears with an adjacent structure on the low energy side. Short time annealings in the temperature range 150–250°C lead to the disappearance of the sharp lines (H) and to the recovery of the initial spectrum. These results shows that hydrogen is able to interact with acceptors in CdTe and ZnTe leading to the formation of a new exciton trapping centre. Possible microscopic models for this isoelectronic-like complex are proposedl