Strain effects in InGaAs/HaAs superlattices

Estimates are made of the effect of strain on the conduction and valence bands of In x Ga 1- x As wells confined by unstrained GaAs barriers. Strain leads to a large splitting between the heavy and light holes which enhances in-plane mobilities, while the heavy hole band itself remains fairly statio...

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Bibliographic Details
Published in:Solid state communications 1987-03, Vol.61 (12), p.825-826
Main Author: Dahl, D.A.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:Estimates are made of the effect of strain on the conduction and valence bands of In x Ga 1- x As wells confined by unstrained GaAs barriers. Strain leads to a large splitting between the heavy and light holes which enhances in-plane mobilities, while the heavy hole band itself remains fairly stationary.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(87)90487-X