Zero resistance at 148.5K in fluorine implanted YBaCuO compound

Fluorine ions with an energy of 180keV at a dose of 1×10 15 ions/cm 2 have been implanted into YBa 2Cu 3O x. After annealed at 800°C, the resistance of the new Y-Ba-Cu-F-O compound drops to zero at 148.5K.

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Bibliographic Details
Published in:Solid state communications 1987-10, Vol.64 (3), p.325-326
Main Authors: Xian-Ren, Meng, Yan-Ru, Ren, Ming-Zhu, Lin, Qing-Yun, Tu, Zhen-Jin, Lin, Li-Hua, Sang, Wei-Qing, Ding, Min-Hua, Fu, Qing-Yun, Meng, Chang-Jiang, Li, Xiu-Hai, Li, Guan-Liang, Qiu, Mou-Yuan, Chen
Format: Article
Language:English
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Summary:Fluorine ions with an energy of 180keV at a dose of 1×10 15 ions/cm 2 have been implanted into YBa 2Cu 3O x. After annealed at 800°C, the resistance of the new Y-Ba-Cu-F-O compound drops to zero at 148.5K.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(87)90974-4