Microwave conductivity measurements on insulating Si:P near the metal-insulator transition

The microwave electrical conductivity σ(ω,N,T) of insulating Si:P has been measured for frequencies between 100 MHz and 2.1 GHz in the density range 0.46

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Bibliographic Details
Published in:Solid state communications 1988-09, Vol.67 (9), p.863-868
Main Authors: Migliuolo, M., Castner, T.G.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
High-frequency effects
plasma effects
Physics
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Description
Summary:The microwave electrical conductivity σ(ω,N,T) of insulating Si:P has been measured for frequencies between 100 MHz and 2.1 GHz in the density range 0.46
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(88)90119-6