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Initial stages of GaP(1 1 0) oxidation
The initial phases of the oxidation of the GaP(1 1 0) cleaved surface have been studied, by photoemission with synchrotron radiation. A first stage in which an increase in band bending occurs and a second stage in which complete saturation of dangling bonds occurs are distinguished. This result acco...
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Published in: | Solid state communications 1988-08, Vol.67 (6), p.647-650 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The initial phases of the oxidation of the GaP(1 1 0) cleaved surface have been studied, by photoemission with synchrotron radiation. A first stage in which an increase in band bending occurs and a second stage in which complete saturation of dangling bonds occurs are distinguished. This result accounts for previous surface reflectance data on the same surface. The processes of band bending variation and dangling bond saturation with oxygen exposure are very similar in GaP(1 1 0) and GaAs(1 1 0). |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(88)90184-6 |