Short range association of EL2 with dislocations in GaAs-In materials

Laser Scanning Tomography coupled with Infra Red Transmission images allow precise investigations on the micro environment of dislocations in GaAs-In materials. In this paper we present a study of the EL2 distribution in the central region of a wafer, using photoquenching experiments at Liquid Nitro...

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Bibliographic Details
Published in:Solid state communications 1988-07, Vol.67 (3), p.321-323
Main Authors: Fillard, J.P., Gall, P., Baroudi, A., Bonnafe, J.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Interaction between different crystal defects
gettering effect
Physics
Structure of solids and liquids
crystallography
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Summary:Laser Scanning Tomography coupled with Infra Red Transmission images allow precise investigations on the micro environment of dislocations in GaAs-In materials. In this paper we present a study of the EL2 distribution in the central region of a wafer, using photoquenching experiments at Liquid Nitrogen Temperature. It is found that a limited increase of the EL2 density is to be noted in the close vicinity of a dislocation.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(88)90625-4