Localized defects in p-CdTe:Cu doped by copper incorporation during Bridgman growth

Localized defects are investigated in p-CdTe:Cu doped by copper incorporation during Bridgman growth. The results of Hall measurements, admittance spectroscopy and photoluminescence (PL) are similar to those obtained from samples Cu-doped by ion-implantation or diffusion : copper is incorporated as...

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Bibliographic Details
Published in:Solid state communications 1988-09, Vol.67 (12), p.1127-1130
Main Authors: Laurenti, J.P., Bastide, G., Rouzeyre, M., Triboulet, R.
Format: Article
Language:English
Subjects:
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Physics
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Summary:Localized defects are investigated in p-CdTe:Cu doped by copper incorporation during Bridgman growth. The results of Hall measurements, admittance spectroscopy and photoluminescence (PL) are similar to those obtained from samples Cu-doped by ion-implantation or diffusion : copper is incorporated as a substitutionnal acceptor in Cd site with an activation energy 0.15 eV. The as-grown character of the Cu-doped samples, without any annealing treatment, rules out any correlation between the 1.5896 eV PL line and annealing processes and attributes definitively this line to excitons bound to Cu Cd acceptors. Copper can be detected without any ambiguity in further technologic applications of CdTe to optoelectronic device purpose.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(88)91069-1