Photoluminescence and magneto-transport of wide InGaAsInP modulation doped quantum wells

• Published in: Solid state communications 1988-09, Vol.67 (12), p.1151-1155
• Main Authors: Simmonds, P.E., Skolnick, M.S., Taylor, L.L., Bass, S.J., Nash, K.J.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(88)91073-3

A photoluminescence (PL) study of 700Å wide modulation doped InGaAsInP quantum wells in magnetic fields up to 10 Tesla, is reported. PL from the lowest electron sub-bands, localised in the space charge potentials at the two sides of the QW, and from higher delocalised sub-bands extending across the whole width of the QW, is observed. The performance of simultaneous Quantum Hall Effect (QHE), Shubnikov-de-Haas and PL measurements is found to be crucial to obtain a reliable understanding of the behaviour of the PL spectra in magnetic field. In particular the QHE provides direct information on the number of filled sub-bands and Landau levels in a complicated system of total carrier density ∼10 12 cm −2, containing several populated electronic sub-bands.