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Impurity optical absorption of SbSI: Ni single crystals
Single crystals of SbSI and SbSI: Ni were grown by the Bridgman technique. The optical absorption spectra of these single crystals were investigated, and also the electronic states of nickel impurity in the SbSI: Ni single crystal were identified. We observed the impurity absorption peaks at 4502, 7...
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Published in: | Solid state communications 1989-03, Vol.69 (12), p.1195-1196 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Single crystals of SbSI and SbSI: Ni were grown by the Bridgman technique. The optical absorption spectra of these single crystals were investigated, and also the electronic states of nickel impurity in the SbSI: Ni single crystal were identified. We observed the impurity absorption peaks at 4502, 7770, 8904, 9090, 12 180 and 14 598 cm
−1 due to the electron transitions between the energy levels of Ni
2+ ions sited at
T
d
symmetry of SbSI host lattice. The crystal field parameter and the Racah parameter are given by
Dq = 327 and
B = 663 cm
−1, respectively. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(89)91063-6 |