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Impurity optical absorption of SbSI: Ni single crystals

Single crystals of SbSI and SbSI: Ni were grown by the Bridgman technique. The optical absorption spectra of these single crystals were investigated, and also the electronic states of nickel impurity in the SbSI: Ni single crystal were identified. We observed the impurity absorption peaks at 4502, 7...

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Bibliographic Details
Published in:Solid state communications 1989-03, Vol.69 (12), p.1195-1196
Main Authors: Youn, Hong-Suk, Kim, Yong-Geun, Kim, Hyung-Gon, Kim, Wha-Tek, Kwun, Sook-Il
Format: Article
Language:English
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Summary:Single crystals of SbSI and SbSI: Ni were grown by the Bridgman technique. The optical absorption spectra of these single crystals were investigated, and also the electronic states of nickel impurity in the SbSI: Ni single crystal were identified. We observed the impurity absorption peaks at 4502, 7770, 8904, 9090, 12 180 and 14 598 cm −1 due to the electron transitions between the energy levels of Ni 2+ ions sited at T d symmetry of SbSI host lattice. The crystal field parameter and the Racah parameter are given by Dq = 327 and B = 663 cm −1, respectively.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(89)91063-6