Hot electrons in delta-doped GaAs(Si) layers

Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) layers, with carrier sheet concentrations N s ranging from 10 12 to 10 13cm −2. Under the same excitation intensity, the luminescence spectra of all samples show a high energy tail which becomes more pron...

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Bibliographic Details
Published in:Solid state communications 1990-09, Vol.75 (9), p.707-710
Main Authors: Mendonça, C.A.C., Scolfaro, L.M.R., Plentz, F., Meneses, E.A., Oliveira, A.T., Rodrigues, R., Guimarães, P.S.S., Bezerra, J.C., Dias, I.F.L., Oliveira, A.G.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) layers, with carrier sheet concentrations N s ranging from 10 12 to 10 13cm −2. Under the same excitation intensity, the luminescence spectra of all samples show a high energy tail which becomes more pronounced as N s increases. Well defined electron temperatures, higher than the lattice temperature, are obtained, characterizing the electron heating effect in this system. The architecture of the delta-doping allows to observe hot electrons even at relatively low laser pumping intensities.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(90)90231-Y