High-frequency conductivity of a 2D electron channel of the GaAs/AlGaAs heterostructure in the QHE regime

We have measured the diagonal conductivity σ xx(ω) of a 2DEG at magnetic fields up to 8T over a range of frequencies from 50 to 600 MHz. At integer filling factors, where QHE is observed, a.c. conductivity exceeds its d.c. value by several orders of magnitude. It increases with frequency and exhibit...

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Bibliographic Details
Published in:Solid state communications 1990-10, Vol.76 (1), p.25-27
Main Authors: Batov, I.E., Polisskii, A.V., Reznikov, M.I., Tal'yanskii, V.I.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:We have measured the diagonal conductivity σ xx(ω) of a 2DEG at magnetic fields up to 8T over a range of frequencies from 50 to 600 MHz. At integer filling factors, where QHE is observed, a.c. conductivity exceeds its d.c. value by several orders of magnitude. It increases with frequency and exhibits slow temperature dependence in the range from 1.7 to 4.2 K.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(90)90291-I