Femtosecond spectroscopic determination of the properties of free carriers in a-Si:H

High intensity femtosecond pulses have been used to inject free carriers in the extended states of a-Si:H where they are maintained for a time of the order of one picosecond. Their optical properties are measured by pump and probe femtosecond spectroscopy. We find that the momentum scattering time t...

Full description

Saved in:
Bibliographic Details
Published in:Solid state communications 1990-06, Vol.74 (11), p.1197-1200
Main Authors: Mourchid, A., Hulin, D., Vanderhaghen, R., Nighan, W.L., Gzara, K., Fauchet, P.M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High intensity femtosecond pulses have been used to inject free carriers in the extended states of a-Si:H where they are maintained for a time of the order of one picosecond. Their optical properties are measured by pump and probe femtosecond spectroscopy. We find that the momentum scattering time that enters in the Drude model and in the expression for the mobility is less than one femtosecond for electrons. The upper bound for the mobility of electrons above the mobility edge is 6 cm 2/V sec.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(90)90305-U