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Carrier density dependence of hot-electron scattering rates in quasi-equilibrium electron-hole plasmas
The scattering rate of a 300 meV electron interacting with a quasi-equilibrium electron-hole plasma in GaAs is calculated as a function of the plasma density for both static (Debye-Hückel) and full dynamic (exact within the random phase approximation) screening. The total scattering rate, directly r...
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Published in: | Solid state communications 1991-05, Vol.78 (5), p.343-346 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The scattering rate of a 300 meV electron interacting with a quasi-equilibrium electron-hole plasma in GaAs is calculated as a function of the plasma density for both static (Debye-Hückel) and full dynamic (exact within the random phase approximation) screening. The total scattering rate, directly related to the imaginary part of the hot electron self energy, is shown to be independent of plasma density up to ∼ 1 × 10
17 cm
−3, for both static and dynamic screening. The “effective” scattering rate of the hot electron outside an energy window of width ∼20 meV is found to be essentially linear in density, with absolute magnitude in agreement with recent experiments, but only for the dynamically screened calculation. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(91)90680-T |