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Carrier density dependence of hot-electron scattering rates in quasi-equilibrium electron-hole plasmas

The scattering rate of a 300 meV electron interacting with a quasi-equilibrium electron-hole plasma in GaAs is calculated as a function of the plasma density for both static (Debye-Hückel) and full dynamic (exact within the random phase approximation) screening. The total scattering rate, directly r...

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Bibliographic Details
Published in:Solid state communications 1991-05, Vol.78 (5), p.343-346
Main Authors: Young, Jeff F., Kelly, Paul J., Henry, Norm L., Dharma-wardana, M.W.C.
Format: Article
Language:English
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Summary:The scattering rate of a 300 meV electron interacting with a quasi-equilibrium electron-hole plasma in GaAs is calculated as a function of the plasma density for both static (Debye-Hückel) and full dynamic (exact within the random phase approximation) screening. The total scattering rate, directly related to the imaginary part of the hot electron self energy, is shown to be independent of plasma density up to ∼ 1 × 10 17 cm −3, for both static and dynamic screening. The “effective” scattering rate of the hot electron outside an energy window of width ∼20 meV is found to be essentially linear in density, with absolute magnitude in agreement with recent experiments, but only for the dynamically screened calculation.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(91)90680-T