Reoxidation of silicon substrates during the sputter deposition of oxidic thin films

Thin films of strontium titanate and yttria stabilized zirconia have been deposited by rf-magnetron sputtering onto differently pretreated silicon surfaces. The analysis with X-ray photoelectron spectroscopy showed that at low deposition pressures even in a pure argon atmosphere a drastic oxidation...

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Bibliographic Details
Published in:Solid state communications 1992-09, Vol.83 (9), p.685-688
Main Author: Behner, H.
Format: Article
Language:English
Subjects:
Chemistry
Exact sciences and technology
General and physical chemistry
Solid-gas interface
Surface physical chemistry
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Summary:Thin films of strontium titanate and yttria stabilized zirconia have been deposited by rf-magnetron sputtering onto differently pretreated silicon surfaces. The analysis with X-ray photoelectron spectroscopy showed that at low deposition pressures even in a pure argon atmosphere a drastic oxidation of the silicon surface takes place. This oxidation is traced back to the formation of energetic oxygen particles in the sputtering plasma. In order to perform a heteroepitaxial growth of oxidic thin films it is therefore proposed either to use higher deposition pressures or a presputtering-phase using metallic targets.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(92)90145-Y