Second harmonic generation near 4 μm in p-type asymmetric GaAs/AlGaAs/AlAs quantum wells

We report second harmonic generation measurements in p-type GaAs/Al 0.5Ga 0.5As/AlAs stepped quantum wells using a free electron laser tunable from 3 to 6 μm. The peak enhancement of the second order susceptibility in singly resonant quantum wells over that of bulk GaAs is nearly one order of magnit...

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Bibliographic Details
Published in:Solid state communications 1995-03, Vol.93 (11), p.903-907
Main Authors: Xu, Z., Fauchet, P.M., Rella, C.W., Richman, B.A., Schwettman, H.A., Wicks, G.W.
Format: Article
Language:English
Subjects:
A. quantum wells
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. optical properties
E. nonlinear optics
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:We report second harmonic generation measurements in p-type GaAs/Al 0.5Ga 0.5As/AlAs stepped quantum wells using a free electron laser tunable from 3 to 6 μm. The peak enhancement of the second order susceptibility in singly resonant quantum wells over that of bulk GaAs is nearly one order of magnitude. The dominant contribution is from the term related to X xyz (2) and X zxy (2), which is in contrast to n-type quantum wells, where X zzz (2) dominates. The enhancement peaks at 3.9 μm, which is attributed to a single resonance corresponding to the SO-HH1 transition.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(94)00822-1