Effects of pressure and magnetic field on metal-insulator transition of partially deuterated (DM-DCNQI- d3[1,1;1]) 2Cu around reentrant metallic region

• Published in: Solid state communications 1996, Vol.98 (12), p.1033-1037
• Main Authors: Ohgi, Taizo, Shimazu, Yoshihiro, Ikehata, Seiichiro, Kato, Reizo
• Format: Article
• Language: English
• Subjects: A. organic crystal; Condensed matter: electronic structure, electrical, magnetic, and optical properties; D. phase transitions; D. valence fluctuations; Electron states; Exact sciences and technology; Metal-insulator transitions and other electronic transitions; Physics; Superconductivity; Transition temperature variations
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(96)00172-X

The electrical property of partially deuterated (DM-DCNQI- d 3[1,1;1]) 2Cu was studied around the reentrant metallic region under pressure and magnetic field. The Q-factor of an LC resonant circuit, which contains a sample in the coil, was measures without any mechanical contacts to the sample. A shift of the transition temperature for the reentrant metallic region in a high magnetic field was observed. Moreover, the disappearance of the reentrant metallic region by the stabilization of the anti-ferro-magnetic insulating phase was observed under a magnetic field of 10 T and pressure of 110 bar. The extra free energy in the insulating phase which comes from the local moments of Cu 2+ can explain this effect of the magnetic field, indicating the possibility that the reentrant behavior is due to the entropy of Cu 2+ in the insulating phase.