Observation on phenomena associated with a slowly varying surface barrier at niobium oxide and aluminum interface

The V- I characteristics of a diode, which consists of a silver contaminated niobium oxide sandwiched between niobium and aluminum, has been studied. It is observed that the diode can be either rectifying or non-rectifying depending upon the duration and repetition rate of the pulse excitation. This...

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Bibliographic Details
Published in:Solid-state electronics 1972-01, Vol.15 (9), p.999-1001
Main Author: Chiou, Y.L.
Format: Article
Language:English
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Summary:The V- I characteristics of a diode, which consists of a silver contaminated niobium oxide sandwiched between niobium and aluminum, has been studied. It is observed that the diode can be either rectifying or non-rectifying depending upon the duration and repetition rate of the pulse excitation. This behavior is attributed to the drift of the silver ions that slowly changes the surface barrier at the interface of the niobium oxide-aluminum. The V- I characteristics of the diode are linear in a log V vs. log I plot. This linearity can be explained as due to space charge limited current flow.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(72)90142-6