Stationary room temperature MOS-C deep-depletion characteristics

A room temperature experimental technique which yields time-independent MOS-C C− V G deep depletion characteristics for both n- and p-bulk devices is described, explained and illustrated. The stationary deep depletion characteristics are obtained by making use of lateral charge transfer in a standar...

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Bibliographic Details
Published in:Solid-state electronics 1975, Vol.18 (1), p.79-85
Main Authors: Pierret, R.F., Small, D.W.
Format: Article
Language:English
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Summary:A room temperature experimental technique which yields time-independent MOS-C C− V G deep depletion characteristics for both n- and p-bulk devices is described, explained and illustrated. The stationary deep depletion characteristics are obtained by making use of lateral charge transfer in a standard ring-dot structure after having controllably charged the interelectrode ambient-oxide interface. Technique limitations associated with the magnitude of the interelectrode charge, surface states, and minority carrier dynamics are also illustrated experimentally and analyzed theoretically.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(75)90073-8