Separation of surface and bulk components in MOS-C generation rate measurements

From a survey of the MOS-C literature it is concluded that the problem of separating generation rate components, specifically separating the depletion region and lateral surface components, is either ignored or handled improperly. Herein a separation technique, the subtraction method, is introduced...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 1976-01, Vol.19 (6), p.505-511
Main Authors: Small, D.W., Pierret, R.F.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:From a survey of the MOS-C literature it is concluded that the problem of separating generation rate components, specifically separating the depletion region and lateral surface components, is either ignored or handled improperly. Herein a separation technique, the subtraction method, is introduced after considering possible alternative approaches. Detailed consideration is given to the underlying conceptual basis, advantages, and limitations of the technique. Finally, sample experimental results derived from both annealed and unannealed structures are presented primarily to illustrate the subtraction method procedure.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(76)90015-0