Approximate values of the multiplication coefficient in one-sided abrupt junctions

In this paper, a simple method is proposed for calculating the multiplication coefficient M in abrupt one-sided junctions near the breakdown. The empirical law of S.L. Miller [1]: 1− 1 M = V V B n V B breakdown voltage is taken as the first term of a series expansion near the breakdown of the functi...

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Bibliographic Details
Published in:Solid-state electronics 1976-01, Vol.19 (10), p.875-881
Main Authors: Leguerre, R., Urgell, J.
Format: Article
Language:English
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Summary:In this paper, a simple method is proposed for calculating the multiplication coefficient M in abrupt one-sided junctions near the breakdown. The empirical law of S.L. Miller [1]: 1− 1 M = V V B n V B breakdown voltage is taken as the first term of a series expansion near the breakdown of the function 1−(1/ M), the value of the exponent n being linked to the physical parameters of the junction and to the type (electron or hole) of the incident carrier. The method is developed for several different materials: Ge, GaAs, GaP, Si using well established data for ionization rates. The values of the multiplication coefficient given by the approximation is compared to the computed exact values obtained by the calculation of the ionization integrals. We found that the approximation is correct with an accuracy of ±10% for a large variation of the ratio V/ V B .
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(76)90046-0