High field collision rates in polar semiconductors

Quantum transport calculations for hot electrons in polar semiconductors reveal a strong distortion of the high momentum transfer scattering processes by intra-collisional field effects. The electric field induced distortion is analysed in terms of the non-Markonian nature of the conduction process...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 1978, Vol.21 (1), p.267-271
Main Author: Barker, J.R.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Quantum transport calculations for hot electrons in polar semiconductors reveal a strong distortion of the high momentum transfer scattering processes by intra-collisional field effects. The electric field induced distortion is analysed in terms of the non-Markonian nature of the conduction process and is dependent upon a finite collision duration. Implications for high field polaron transport in InSb at low temperatures are discussed.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(78)90147-8