Investigation of leakage characteristics of PbSnTes̵bndPbTe inverted heterostructure diodes

The results of a study of the overall electrical characteristics of PbSnTe diodes are presented and interpreted on the basis of a simple p- n junction model. These diodes are made from a PbSnTe epilayer grown by a liquid-phase epitaxy technique on a PbTe wafer substrate. The diodes have a 50% spectr...

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Bibliographic Details
Published in:Solid-state electronics 1978, Vol.21 (4), p.625-632
Main Authors: Wang, C.C., Kalisher, M.H., Tracy, J.M., Clarke, J.E., Longo, J.T.
Format: Article
Language:English
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Summary:The results of a study of the overall electrical characteristics of PbSnTe diodes are presented and interpreted on the basis of a simple p- n junction model. These diodes are made from a PbSnTe epilayer grown by a liquid-phase epitaxy technique on a PbTe wafer substrate. The diodes have a 50% spectral cutoff at 11.5 μm when operated at 85K, which shifts to 14.5 μm at T = 15K. Major contributions to the bulk current are diffusion current at T > 80K, and generation-recombination current for 80 > T ≳ 30K. Surface related leakage is predominant at T < 30 K for small area diodes ( A < 1 × 10 −4 cm 2) at low bias voltage. Bulk defect related leakage contributes heavily the large area diodes ( A > 1 × 10 −3 cm 2) at T ≲ 60K.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(78)90328-3