A MESFET model for circuit analysis

A model for silicon Schottky barrier field-effect transistors (Si MESFETs) with micron and submicron dimensions has been implemented in the integrated circuit simulation program SPICE2. A description of the model and its implementation is given, together with a discussion of the physical effects tha...

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Bibliographic Details
Published in:Solid-state electronics 1980-01, Vol.23 (2), p.121-126
Main Authors: Hartgring, Cornelis D., Oldham, W.G., Chiu, Tsu-Yin
Format: Article
Language:English
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Summary:A model for silicon Schottky barrier field-effect transistors (Si MESFETs) with micron and submicron dimensions has been implemented in the integrated circuit simulation program SPICE2. A description of the model and its implementation is given, together with a discussion of the physical effects that are important in submicron channel length Si MESFETs. The model is compared with d.c. experimental data with an emphasis on temperature dependence.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(80)90146-X