Electronic characterization of double-gate thin film transistors

A method of determining the electronic parameters, i.e. the free charge carrier density, the surface state density and the bulk trap state density, of the semiconductor in double-gate thin film transistors is described. The method is based on a comparison of the calculated field-effect conductance w...

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Bibliographic Details
Published in:Solid-state electronics 1981-01, Vol.24 (3), p.257-261
Main Authors: Chen, Inan, Luo, Fang C.
Format: Article
Language:English
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Summary:A method of determining the electronic parameters, i.e. the free charge carrier density, the surface state density and the bulk trap state density, of the semiconductor in double-gate thin film transistors is described. The method is based on a comparison of the calculated field-effect conductance with the observed drain current of the device. The theory is formulated such that it applies even though the semiconductor is thin compared with the effective Debye lengths. An illustrative example of the method applied to a CdSe double-gate thin film transistor is given.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(81)90088-5