MOS transistors with a forward-biased source-substrate junction

The electrical characteristics of p-channel MOSTs (metal-oxide-semiconductor) with a source-to-substrate forward voltage are studied. A sizeable magneto-electrical effect in the channel is established, when a weak magnetic induction perpendicular to the drain current and parallel to SiSiO 2 interfa...

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Bibliographic Details
Published in:Solid-state electronics 1982-01, Vol.25 (12), p.1157-1160
Main Authors: Velchev, N.B., Roumenin, T.S., Smirnov, N.D.
Format: Article
Language:English
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Summary:The electrical characteristics of p-channel MOSTs (metal-oxide-semiconductor) with a source-to-substrate forward voltage are studied. A sizeable magneto-electrical effect in the channel is established, when a weak magnetic induction perpendicular to the drain current and parallel to SiSiO 2 interface is applied. The experimental results reported at room and liquid nitrogen temperature are briefly discussed.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(82)90073-9