A geometrical model of the threshold voltage of short and narrow channel MOSFETs

A simple geometrical model allows the calculation of the threshold voltage of short and narrow channel MOSFETs as a function of gate length, gate width, source and drain depth, substrate voltage and source drain voltage. Input parameters of the program are the customary values such as oxide thicknes...

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Bibliographic Details
Published in:Solid-state electronics 1982, Vol.25 (1), p.59-61
Main Author: Jäntsch, Ottomar
Format: Article
Language:English
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Summary:A simple geometrical model allows the calculation of the threshold voltage of short and narrow channel MOSFETs as a function of gate length, gate width, source and drain depth, substrate voltage and source drain voltage. Input parameters of the program are the customary values such as oxide thickness and, furthermore, an effective impurity concentration in the field region. The flat band voltage and the effective impurity concentration in the channel region can be calculated by a modified SUPREM program.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(82)90095-8