Low-frequency noise characteristics of Gallium Arsenide MESFETs

Gallium Arsenide is a complex material with a high defect density and a poor surface. It is possible that several low-frequency noise producing mechanisms may occur in a single device. This note shows one such case.

Saved in:
Bibliographic Details
Published in:Solid-state electronics 1984-01, Vol.27 (11), p.947-948
Main Authors: Rucker, L.M., Hellums, J.R.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Gallium Arsenide is a complex material with a high defect density and a poor surface. It is possible that several low-frequency noise producing mechanisms may occur in a single device. This note shows one such case.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(84)90067-4