Low-frequency noise in gallium arsenide structures

This work reports the study of low-frequency electrical noise in Gallium Arsenide (GaAs) resistor and MESFET structures. The current and frequency dependence of the noise was found to indicate the presence of at least two physical mechanisms. The identified mechanisms are time constant related diffu...

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Bibliographic Details
Published in:Solid-state electronics 1984-01, Vol.27 (11), p.949-952
Main Authors: Hellums, J.R., Rucker, L.M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:This work reports the study of low-frequency electrical noise in Gallium Arsenide (GaAs) resistor and MESFET structures. The current and frequency dependence of the noise was found to indicate the presence of at least two physical mechanisms. The identified mechanisms are time constant related diffusion noise and trapping/detrapping by a mechanism having a distribution of time constants with a lower limit on the distribution.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(84)90068-6