Minority carrier injection in Pt-Si/Si Schottky barrier diodes

Minority carrier injection was investigated as a function of current density in platinum silicide n- silicon Schottky barrier diodes. Results arein reasonable agreement with published theory. At low currents the minority carrier injection efficiency γ is approximately constant. With increasing curre...

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Bibliographic Details
Published in:Solid-state electronics 1986-03, Vol.29 (3), p.365-369
Main Authors: Hargrove, Michael J., Anderson, R.L.
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Minority carrier injection was investigated as a function of current density in platinum silicide n- silicon Schottky barrier diodes. Results arein reasonable agreement with published theory. At low currents the minority carrier injection efficiency γ is approximately constant. With increasing current γ increases linearly over a range because of the current-induced electric field, reaches a maximum, and then decreases because of contact effects. Devices with and without buried layers are compared. In addition to reducing the series resistance, the presence of the buried layer decreases γ by two orders of magnitude and reduces current-crowding.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(86)90216-9