Combined process modeling and subthreshold device simulation

A two-dimensional numerical process and device simulation is presented to obtain the subthreshold characteristics of narrow-width MOSFETs. The process simulator calculates the doping distribution in the width direction on the basis of technology data. The device simulator determines the electrical c...

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Bibliographic Details
Published in:Solid-state electronics 1986-03, Vol.29 (3), p.371-375
Main Authors: Klose, Helmut, Seidl, Albert
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A two-dimensional numerical process and device simulation is presented to obtain the subthreshold characteristics of narrow-width MOSFETs. The process simulator calculates the doping distribution in the width direction on the basis of technology data. The device simulator determines the electrical characteristics using the calculated doping profile. Calculated and measured data on the threshold voltage as a function of the channel width agree well.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(86)90217-0