Determination of interface state density especially at the band edges by noise measurements on MOSFETs

There are several experimental methods of measuring interface state densities on Si/SiO 2 interfaces. Up to now none of them has been able to provide information about the states within 0.1 eV near the band edges. However measurements of flicker or 1/ ƒ noise on MOSFETs allow interface state densiti...

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Bibliographic Details
Published in:Solid-state electronics 1987-10, Vol.30 (10), p.1013-1015
Main Authors: Jäntsch, O., Borchert, B.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:There are several experimental methods of measuring interface state densities on Si/SiO 2 interfaces. Up to now none of them has been able to provide information about the states within 0.1 eV near the band edges. However measurements of flicker or 1/ ƒ noise on MOSFETs allow interface state densities to be determined not only in the whole band gap but also within the bands.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(87)90092-X