Determination of the mobility profile in silicon-on-sapphire material using the “fat” FET principle

Using a field effect transistor (FET) structure with a Schottky gate, the mobility profile in a silicon layer is calculated from capacitance and conductance measurements. The measurements require ordinary laboratory instruments only. A short theory is presented, followed by experimental values for s...

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Bibliographic Details
Published in:Solid-state electronics 1988-11, Vol.31 (11), p.1583-1585
Main Authors: Söderbärg, A., Rosling, M., Norde, H., Tove, P.A.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Using a field effect transistor (FET) structure with a Schottky gate, the mobility profile in a silicon layer is calculated from capacitance and conductance measurements. The measurements require ordinary laboratory instruments only. A short theory is presented, followed by experimental values for silicon on sapphire (SOS) material. The results show a sharp decrease in mobility at the defect rich layer close to the sapphire and close to the silicide gate junction. A maximum mobility of 490 cm 2/Vs for electrons and 190 cm 2/Vs for holes was obtained for a position roughly in the middle of the silicon layer.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90004-4