The isotype Al0.05Ga0.95As/Al0.35Ga0.65As interface of the LPE-grown double heterostructure at elevated temperature

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Bibliographic Details
Published in:Solid-state electronics 1988-05, Vol.31 (5), p.921-927
Main Authors: KRISPIN, P, BEISTER, G, MAEGE, J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90046-9